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QS8J13 -12v pch+pch middle power mosfet datasheet ll outline v dss -12v tsmt8 r ds(on) (max.) 22m i d 5.5a p d 1.5w ll features ll inner circuit 1) low on - resistance. 2) small surface mount package . 3) pb-free lead plating ; rohs compliant. 4) halogen free. ll packaging specifications type packing embossed tape reel size (mm) 180 ll application tape width (mm) 8 switching basic ordering unit (pcs) 3000 taping code tr marking j13 ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss -12 v continuous drain current i d *1 5.5 a pulsed drain current i d,pulse *2 18 a gate - source voltage v gss 0 -8 v power dissipation total p d *3 1.5 w element 1.25 junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 1/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient total r thja *3 - 83.3 - /w element - 100 - ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = -1ma -12 - - v breakdown voltage temperature coefficient v (br)dss i d = -1ma - -5.0 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -12v, v gs = 0v - - -10 a gate - source leakage current i gss v ds = 0v, v gs = -8v - - -10 a gate threshold voltage v gs(th) v ds = -6v, i d = -1ma -0.3 - -1.0 v gate threshold voltage temperature coefficient v gs(th) i d = -1ma - 2.7 - v/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = -4.5v, i d = -5.5a - 15 22 m v gs = -2.5v, i d = -2.7a - 19 28 v gs = -1.8v, i d = -2.7a - 24 38 v gs = -1.5v, i d = -1.1a - 29 58 transconductance g fs *4 v ds = -6v, i d = -5.5a 8.5 - - s *1 limited only by maximum temperature allowed. *2 pw 10s, duty cycle 1% *3 mounted on a ceramic board. *4 pulsed www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 2/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 6300 - pf output capacitance c oss v ds = -6v - 750 - reverse transfer capacitance c rss f = 1mhz - 750 - turn - on delay time t d(on) *4 v dd ? -6v,v gs = -4.5v - 13 - ns rise time t r *4 i d = -2.7a - 100 - turn - off delay time t d(off) *4 r l = 2.2 - 400 - fall time t f *4 r g = 10 - 200 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? -6v, i d = -5.5a v gs = -4.5v - 60 - nc gate - source charge q gs *4 - 10 - gate - drain charge q gd *4 - 9 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s *1 t a = 25 - - -1 a body diode pulse current i sp *2 - - -18 forward voltage v sd *4 v gs = 0v, i s = -5.5a - - -1.2 v www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 3/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 4/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 5/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 tranceconductance vs. drain current www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 6/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature fig.14 static drain - source on - state resistance vs. drain current(i) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 7/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic curves fig. 1 5 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) fig.17 static drain - source on - state resistance vs. drain current( ) fig.18 static drain - source on - state resistance vs. drain current( ) www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 8/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll electrical characteristic curves fig. 1 9 typical capacitance vs. drain - source voltage fig.20 switching characteristics fig.21 dynamic input characteristics fig.22 source c urrent vs. source drain voltage www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 9/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll measurement circuits fig. 1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 10/11 20140806 - rev.001 downloaded from: http:///
QS8J13 datasheet ll dimensions www.rohm.com ? 2014 rohm co., ltd. all rights reserved. 11/11 20140806 - rev.001 downloaded from: http:///
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